Fast infrared detectors based on nonuniform semiconductors

Steponas P. Asmontas; J. Gradauskas; D. Seliuta; A. Suziedelis; G. Valusis; E. Sirmulis

doi:10.1117/12.517026

8 August 2003 Fast infrared detectors based on nonuniform semiconductors

Steponas P. Asmontas, J. Gradauskas, D. Seliuta, A. Suziedelis, G. Valusis, E. Sirmulis

Proceedings Volume 5123, Advanced Optical Devices, Technologies, and Medical Applications; (2003) https://doi.org/10.1117/12.517026
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

We review novel group of fast infrared detectors based on hot carrier effects in nonuniform Ge, Si, GaAs, AlGaAs and Ti/n-Si Schottky structures. It is demonstrated that the devices can be used to detect infrared pulses of nanosecond duration at room temperature. Physcial mechanism responsible for the photovoltage signal formation both in p-n and l-h junction of moderately and degenerately doepd semiconductors are analyzed and discussed. The influence of aluminum arsenide mole fractin on th emagnitude of the photoresponse to infrared radiation in AlGaAs/GaAs p-n junction is studied. Operational principle of the Schottky barrier detector at various radaition frequencies is considered. It is shown that photoresponse of the Schottky barrier detector superlinearly depends on infrared radiation intensity.

Citation Download Citation

Steponas P. Asmontas, J. Gradauskas, D. Seliuta, A. Suziedelis, G. Valusis, and E. Sirmulis "Fast infrared detectors based on nonuniform semiconductors", Proc. SPIE 5123, Advanced Optical Devices, Technologies, and Medical Applications, (8 August 2003); https://doi.org/10.1117/12.517026

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