Nanocrystal sensitization of Er in silica for Si-based optical material at 1.5 um

Jung H Shin; Kwan-Sik Cho; Ji-Hong Jhe; Gun Yong Sung; Baek-Hyun Kim; Seong-Ju Park

doi:10.1117/12.529273

6 July 2004 Nanocrystal sensitization of Er in silica for Si-based optical material at 1.5 μm

Jung H Shin, Kwan-Sik Cho, Ji-Hong Jhe, Gun Yong Sung, Baek-Hyun Kim, Seong-Ju Park

Proceedings Volume 5359, Quantum Sensing and Nanophotonic Devices; (2004) https://doi.org/10.1117/12.529273
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Nanocrystal Si (nc-Si) sensitization of Er in a silica matrix to obtain high optical activity in a Si-compatible material is investigated. Er-doped silicon-rich silicon oxide (SRSO) films, which consist of nc-Si embedded inside an SiO₂ matrix, were deposited by electron-cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) using SiH₄ and O₂ with concurrent sputtering of Er followed by a high temperature anneal. For comparison, Er-free SRSO films were also deposited. Detailed investigation of processing conditions indicates that an annealing process consisting of 30 min anneal at 950°C without hydrogenation to be optimum for activation of Er. Investigation of MOS diode structure with Er-doped and Er-free SRSO films indicates that a mesa-type structure with n⁺ poly-silicon top contact, p-type substrate, and SRSO Si content of less than 40% gives the best diode performance. Er-free SRSO diodes fabricated using the optimum conditions show electroluminescence under forward bias. Er-doped SRSO diodes show photoresponse at 1.54 μm due to nanocrystal -- Er interactions, showing the promise of developing integrated, Si-based 1.54 μm light detectors for integrated microphotonic devices.

Citation Download Citation

Jung H Shin, Kwan-Sik Cho, Ji-Hong Jhe, Gun Yong Sung, Baek-Hyun Kim, and Seong-Ju Park "Nanocrystal sensitization of Er in silica for Si-based optical material at 1.5 μm", Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); https://doi.org/10.1117/12.529273

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