Study of Nd-implanted Si-based emitting film materials

Meiling Yuan; Qingnian Wang; Shuifeng Wang; Xiaofeng Zhang; Le Jiang

doi:10.1117/12.573316

12 January 2005 Study of Nd-implanted Si-based emitting film materials

Meiling Yuan, Qingnian Wang, Shuifeng Wang, Xiaofeng Zhang, Le Jiang

Proceedings Volume 5632, Light-Emitting Diode Materials and Devices; (2005) https://doi.org/10.1117/12.573316
Event: Photonics Asia, 2004, Beijing, China

Abstract

The photoluminescence (PL) spectra at room temperature for monocrystal Si wafer and thermal oxide Si samples doped Nd ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL peaks increases with the increasing of Nd ion dose during ion beam synthesis within a certain limits, moreover, photoluminescence is closely relative to the temperature of thermal annealing. Besides, the feature and appearance of the samples was surveyed with atomic force microscopy (AFM).The photoluminescence mechanism for our samples is also discussed.

Citation Download Citation

Meiling Yuan, Qingnian Wang, Shuifeng Wang, Xiaofeng Zhang, and Le Jiang "Study of Nd-implanted Si-based emitting film materials", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); https://doi.org/10.1117/12.573316

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