Paper
8 December 2004 The preparation of the single-phase perovskite conductive LaNiO3 films on different substrates
Jian-Kang Li, Xi Yao, Liangying Zhang
Author Affiliations +
Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607561
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
LaNiO3 thin films were deposited on Si (100) and Pt(111)/Ti/SiO2/Si substrates by a modified metalorganic decomposition technique and rapid thermal annealing method. The structures of the films were characterized by x-ray diffraction (XRD). XRD analysis show that the LaNiO3 thin films on Si (100) and Pt(111)/Ti/SiO2/Si substrates possess single-phase perovskite-type structure and highly (100)-oriented. Scanning electron microscope (SEM) and atom force microscopy (AFM) image show the LaNiO3 films with uniform and crack-free surfaces. The resisitivity vs. temperature and thickness curves of the LaNiO3 films showed that the films possessed good metallic character.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jian-Kang Li, Xi Yao, and Liangying Zhang "The preparation of the single-phase perovskite conductive LaNiO3 films on different substrates", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607561
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Cited by 2 scholarly publications and 1 patent.
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KEYWORDS
Silicon

Thin films

Annealing

Perovskite

Electrodes

Scanning electron microscopy

Crystals

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