Paper
8 December 2004 Vanadium oxide thin films prepared by RF magnetron sputtering method
Zhishuan Li, Suntao Wu, Jing Li, Donghui Guo, Fuchun Xu
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607548
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
The vanadium oxide thin films were prepared by R.F. magnetron sputtering method under different deposition conditions. The microstructures of the samples have been investigated by XRD, XPS, and the Laser Scanning Confocal Microscope . By XRD and XPS, it was found that properly decreasing substrate temperature or increasing sputtering power, larger crystalline particle size and better crystalline orientation with V2O5 (001) after annealing can be gotten; Properly increasing substrate temperature or reducing sputtering power, the proportions of high valence vanadium oxides are increased. Based on our analyses, high-purity vanadium pentoxide films have been prepared by adjusting flux ratio of O2 and Ar, substrate temperature, and sputtering power.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhishuan Li, Suntao Wu, Jing Li, Donghui Guo, and Fuchun Xu "Vanadium oxide thin films prepared by RF magnetron sputtering method", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607548
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KEYWORDS
Vanadium

Annealing

Sputter deposition

Oxides

Thin films

Crystals

Confocal microscopy

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