Effect of a buffer layer on the photovoltaic properties of AZO/Cu<sub>2</sub>O solar cells

Toshihiro Miyata; Tadatsugu Minami; Hideki Tanaka; Horotoshi Sato

doi:10.1117/12.638649

3 January 2006 Effect of a buffer layer on the photovoltaic properties of AZO/Cu₂O solar cells

Toshihiro Miyata, Tadatsugu Minami, Hideki Tanaka, Horotoshi Sato

Proceedings Volume 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV; 603712 (2006) https://doi.org/10.1117/12.638649
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia

Abstract

The effect of a buffer layer and/or interface region on the photovoltaic properties of Al-doped ZnO (AZO)/Cu₂O heterojunction solar cells was investigated. The I-V characteristics and photovoltaic properties in AZO/ZnO-In₂O₃/Cu₂O devices were considerably improved by increasing the Zn content (Zn/(In+Zn atomic ratio)) of the ZnO-In₂O₃ thin-film buffer layer. In addition, the photovoltaic properties of AZO/Zn_1-XMg_XO/Cu₂O devices were found to degrade significantly as the composition (X) was increased above approximately 0.1 because of the increase in resistivity of the buffer layer. Although the spectral response of photocurrent observed in AZO/Zn_1-XMg_XO/Cu₂O devices was considerably affected by altering the value of X, the photo-generated hole in the buffer layer of these devices was not successfully injected into the Cu₂O. AZO/Cu₂O heterojunctions fabricated using Cu₂O sheets with a sulfurized surface exhibited ohmic I-V characteristics.

Citation Download Citation

Toshihiro Miyata, Tadatsugu Minami, Hideki Tanaka, and Horotoshi Sato "Effect of a buffer layer on the photovoltaic properties of AZO/Cu₂O solar cells", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 603712 (3 January 2006); https://doi.org/10.1117/12.638649

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