Electrical Characterization Of MIS Interfaces

J. F. Wager

doi:10.1117/12.961193

26 June 1986 Electrical Characterization Of MIS Interfaces

J. F. Wager

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961193
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Characterization of metal-insulator-semiconductor (MIS) interfaces by capacitance-voltage (C-V) analysis is reviewed. Particular emphasis is placed upon III-V semiconductor inter-faces which are compared to the nearly ideal thermal Si0₂/Si system.

Citation Download Citation

J. F. Wager "Electrical Characterization Of MIS Interfaces", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961193

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