Paper
14 November 2007 Low doping white phosphorescent organic light-emitting diodes
Yadong Jiang, Jun Wang, Shuangling Lou, Hui Lin, Junsheng Yu
Author Affiliations +
Proceedings Volume 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 67223Z (2007) https://doi.org/10.1117/12.783572
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China
Abstract
Efficient white organic light-emitting diodes (OLEDs) based on a novel phosphorescent material (t-bt)2Ir(acac) with a structure ITO/CuPc (15 nm)/NPB (15 nm)/CBP : (t-bt)2Ir(acac) (30 nm, x%)/ BCP (20 nm)/Alq (20 nm)/LiF (1 nm)/Al (100 nm) were fabricated. (t-bt)2Ir(acac) lightly doped in a host material CBP was used as a yellow emitting layer and fluorescent material NPB was used as a blue emitting layer as well as a conventional hole transporting material. Low doping concentration (1%) device showing white light emission from 6 V to 14 V has a maximum efficiency 1.6 lm/W at 8 V and a maximum luminance of 4360 cd/m2 at 13 V. High doping concentration (2% and 5%) devices emit strong yellow light under low bias and change to white light emission above 10 V bias although they show higher efficiency and luminance than 1% doping concentration device.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yadong Jiang, Jun Wang, Shuangling Lou, Hui Lin, and Junsheng Yu "Low doping white phosphorescent organic light-emitting diodes", Proc. SPIE 6722, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 67223Z (14 November 2007); https://doi.org/10.1117/12.783572
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KEYWORDS
Doping

Organic light emitting diodes

Electroluminescence

External quantum efficiency

Fluorescent materials

Lithium

Phosphorescent materials

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