Schottky barrier formation using composite of polyaniline containing iron oxides

H. A. Motaweh; T. G. Abdel-Malik

doi:10.1117/12.793869

7 October 2008 Schottky barrier formation using composite of polyaniline containing iron oxides

H. A. Motaweh, T. G. Abdel-Malik

Proceedings Volume 7052, Organic Photovoltaics IX; 705212 (2008) https://doi.org/10.1117/12.793869
Event: Photonic Devices + Applications, 2008, San Diego, California, United States

Abstract

A composite of polyaniline (PANI) containing iron oxides (Fe₃O₄) with nanometer size was prepared by a chemical method. The electrical properties of (PANI-Fe₃O₄) sandwich structure using ohmic gold and blocking aluminium electrodes were studied. The current density - voltage (J-V) characteristics for the device resemble the typical dark current versus applied voltage characteristic for conventional Schottky diode. Electronic parameters have been calculated using J-V and capacitance-voltage (C-V) measurements.

Citation Download Citation

H. A. Motaweh and T. G. Abdel-Malik "Schottky barrier formation using composite of polyaniline containing iron oxides", Proc. SPIE 7052, Organic Photovoltaics IX, 705212 (7 October 2008); https://doi.org/10.1117/12.793869

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