Preparation and optoelectronic properties of NiO/ZnO heterostructure nanowires

Wei-Chih Tsai; Shui-Jinn Wang; Chih-Ren Tseng; Rong-Ming Ko; Jia-Chuan Lin

doi:10.1117/12.820546

18 May 2009 Preparation and optoelectronic properties of NiO/ZnO heterostructure nanowires

Wei-Chih Tsai, Shui-Jinn Wang, Chih-Ren Tseng, Rong-Ming Ko, Jia-Chuan Lin

Proceedings Volume 7356, Optical Sensors 2009; 73561F (2009) https://doi.org/10.1117/12.820546
Event: SPIE Optics + Optoelectronics, 2009, Prague, Czech Republic

Abstract

This study proposes the use of a ZnO-nanowire (ZnO-NW)-based heterojunction structure for applications of nano optoelectronic sensors and photovoltaic devices. Nano heterojunctions (NHJs) were formed via e-beam deposition of ptype nickel oxide (NiO) onto the vertical-aligned ZnO-NWs grown by hydro-thermal growth method. The dark J-V curve shows that the prepared NiO/ZnO-NWs NHJ has a diode-like behavior with a forward threshold voltage (V_th) of 1.2 V and a leakage current (J_r at -1V) of 0.02 μA/cm², respectively. It also exhibits a superior response to UV (366 nm) and AM 1.5G light illuminations. The V_th and the photocurrents (i.e., J_r at -1V) under UV (366 nm @ 6 mW/cm²) and AM 1.5G light were 0.7 V/0.06 μA/cm² and 0.5 V/ 3.2 μA/cm², respectively, revealing an increase in the diode current of about 3× and 160×, respectively.

Citation Download Citation

Wei-Chih Tsai, Shui-Jinn Wang, Chih-Ren Tseng, Rong-Ming Ko, and Jia-Chuan Lin "Preparation and optoelectronic properties of NiO/ZnO heterostructure nanowires", Proc. SPIE 7356, Optical Sensors 2009, 73561F (18 May 2009); https://doi.org/10.1117/12.820546

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