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22 September 2010 Silicon solar cells with polysilicon emitters and back surface fields
Jiang Du, Lyall P. Berndt, N. Garry Tarr
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Proceedings Volume 7750, Photonics North 2010; 77502W (2010) https://doi.org/10.1117/12.871608
Event: Photonics North 2010, 2010, Niagara Falls, Canada
Abstract
The first solar cells using in-situ doped polysilicon contacts to form both emitter and back surface field (BSF) regions are reported. The use of polysilicon contacts permits extremely low thermal budget processing (maximum 850°C 5 sec for dopant activation), preserving substrate properties. The effectiveness of the BSF is best seen with backside illumination, where the photocurrent under natural sunlight is found to be over 30% of that obtained with frontside illumination, even though the substrate thickness is comparable to the minority carrier diffusion length. The applicability of the structure to bifacial operation is considered.
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Jiang Du, Lyall P. Berndt, and N. Garry Tarr "Silicon solar cells with polysilicon emitters and back surface fields", Proc. SPIE 7750, Photonics North 2010, 77502W (22 September 2010); https://doi.org/10.1117/12.871608
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KEYWORDS
Oxides
Solar cells
Diffusion
Low pressure chemical vapor deposition
Aluminum
Resistance
Semiconducting wafers
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