Investigation of hole injection characteristics in NPB/Alq3 heterojunction devices

Denghui Xu; Xiong Li; Zhaoyue Lv; Ye Zou; Zhenbo Deng

doi:10.1117/12.870303

15 November 2010 Investigation of hole injection characteristics in NPB/Alq₃ heterojunction devices

Denghui Xu, Xiong Li, Zhaoyue Lv, Ye Zou, Zhenbo Deng

Proceedings Volume 7852, LED and Display Technologies; 785218 (2010) https://doi.org/10.1117/12.870303
Event: Photonics Asia 2010, 2010, Beijing, China

Abstract

The effect of ozone and O₂ plasma treatment of ITO on the charge-carrier injection in ITO/N, N'-bis-(1-napthyl)-N, N'- diphenyl-1,1'biphenyl-4,4'-diamine (NPB)/tris(8-quinolinolato)-aluminum (Alq₃)/Al organic heterojunction devices have been studied through the analysis of current-voltage characteristics. From the experiments, it is demonstrated that the average electric field inside Alq₃ layer is larger than the average field in the NPB layer. The investigation demonstrated that the hole injection into NPB from anode is Fowler-Nordheim (FN) tunneling and the electron injection into Alq3 from cathode is Richardson-Schottky (RS) thermonic emission.

Citation Download Citation

Denghui Xu, Xiong Li, Zhaoyue Lv, Ye Zou, and Zhenbo Deng "Investigation of hole injection characteristics in NPB/Alq₃ heterojunction devices", Proc. SPIE 7852, LED and Display Technologies, 785218 (15 November 2010); https://doi.org/10.1117/12.870303

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