A comparison between Si and GaAs nanowire-based photovoltaic devices

S. Abdellatif; K. Kirah; H. Ghali; W. Anis

doi:10.1117/12.921047

23 December 2011 A comparison between Si and GaAs nanowire-based photovoltaic devices

S. Abdellatif, K. Kirah, H. Ghali, W. Anis

Proceedings Volume 8204, Smart Nano-Micro Materials and Devices; 820412 (2011) https://doi.org/10.1117/12.921047
Event: SPIE Smart Nano + Micro Materials and Devices, 2011, Melbourne, Australia

Abstract

A comparison between Silicon (Si) which is an indirect band-gap semiconductor and Gallium Arsenide (GaAs) as a direct band-gap semiconductor for vertical-aligned nanowire radial pn junction-based photovoltaic (PV) devices is presented. The study takes place through determining the fill factor, the power conversion efficiency, the optimum device length and the spectrum of the quantum efficiency. The sensitivity of both Si and GaAs nanowire to temperature variations is also investigated. Finally, the array effect for nanowires of each material alone then of arrays of mixed elements' types is simulated. The results are found to be in accordance with the available experimental measurements.

Citation Download Citation

S. Abdellatif, K. Kirah, H. Ghali, and W. Anis "A comparison between Si and GaAs nanowire-based photovoltaic devices", Proc. SPIE 8204, Smart Nano-Micro Materials and Devices, 820412 (23 December 2011); https://doi.org/10.1117/12.921047

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