GaN-based microcavity polariton light emitting diodes

Tien-Chang Lu; Ying-Yu Lai; Si-Wei Huang; Jun-Rong Chen; Yung-Chi Wu; Shiang-Chi Lin; Shing-Chung Wang; Yoshihisa Yamamoto

doi:10.1117/12.908343

6 February 2012 GaN-based microcavity polariton light emitting diodes

Tien-Chang Lu, Ying-Yu Lai, Si-Wei Huang, Jun-Rong Chen, Yung-Chi Wu, Shiang-Chi Lin, Shing-Chung Wang, Yoshihisa Yamamoto

Author Affiliations +

Proceedings Volume 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI; 82780O (2012) https://doi.org/10.1117/12.908343
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature (RT). The hybrid microcavity structure consists of InGaN/GaN quantum wells sandwiched between bottom epitaxial DBR and top dielectric DBR. The anti-crossing behavior of polariton LED denotes a clear signature of the strong interaction between excitons and cavity photons.

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Tien-Chang Lu, Ying-Yu Lai, Si-Wei Huang, Jun-Rong Chen, Yung-Chi Wu, Shiang-Chi Lin, Shing-Chung Wang, and Yoshihisa Yamamoto "GaN-based microcavity polariton light emitting diodes", Proc. SPIE 8278, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, 82780O (6 February 2012); https://doi.org/10.1117/12.908343

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