Modeling of dark current suppression in unipolar barrier infrared detectors

Jun Wang; Xiaoshuang Chen; Weida Hu; Yongguo Chen; Lin Wang; Wei Lu; Faqiang Xu

doi:10.1117/12.918960

31 May 2012 Modeling of dark current suppression in unipolar barrier infrared detectors

Jun Wang, Xiaoshuang Chen, Weida Hu, Yongguo Chen, Lin Wang, Wei Lu, Faqiang Xu

Proceedings Volume 8353, Infrared Technology and Applications XXXVIII; 835335 (2012) https://doi.org/10.1117/12.918960
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

In this paper, the physical mechanism of unipolar barrier structures is elaborated for dark current suppression. To better understand the performance characteristics of the devices and optimize the structures, we have performed numerical drift-diffusion simulations of both n-side and p-side InAs based unipolar barrier photodiodes with AlAs_0.18Sb_0.82 barriers, as well as conventional pn junction detectors. Numerical simulation was used to calculate the current-voltage (I-V) characteristic and R₀A values for InAs unipolar barrier photodiodes and traditional pn junction photodiodes. The performances of different device structures have been investigated for temperatures from 150 K to 350 K. Comparing to conventional devices, the unipolar barrier device has shown significant performance improvement.

Citation Download Citation

Jun Wang, Xiaoshuang Chen, Weida Hu, Yongguo Chen, Lin Wang, Wei Lu, and Faqiang Xu "Modeling of dark current suppression in unipolar barrier infrared detectors", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835335 (31 May 2012); https://doi.org/10.1117/12.918960

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