Application of Au/Sn in the formation of p-HgCdTe photoconductive detectors' electrodes

Yidan Tang; Jia Jia; Hui Qiao; Yan Zhang; Xiangyang Li

doi:10.1117/12.974977

15 October 2012 Application of Au/Sn in the formation of p-HgCdTe photoconductive detectors' electrodes

Yidan Tang, Jia Jia, Hui Qiao, Yan Zhang, Xiangyang Li

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 84190Z (2012) https://doi.org/10.1117/12.974977
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

The formation of devices' electrodes is one of the key techniques in the fabrication of HgCdTe infrared photoconductive detectors. To study the properties of devices using the structure of Au/Sn/p-HgCdTe, an experiment was made, and compared with the devices deposited Au/In on p-HgCdTe. By applying the Au/Sn on p-HgCdTe contact to photoconductive devices, the current-voltage characteristics of the devices were measured, and the results show that the metal contact is ohmic contact. The contact resistance of Au/Sn/p-HgCdTe devices was measured, being smaller than Au/In/p-HgCdTe devices, and both the response rate and signal of Au/Sn/p-HgCdTe devices were much bigger. A standard test method for measuring adhesion by tape was applied to measure the adhesion between Tin and HgCdTe, and the results show that the adhesion of Sn/HgCdTe is bigger than In/HgCdTe. Experimental results show that Tin contacts are suitable as low-resistance, low-noise, reliable and manufacturable ohmic contacts to p-type HgCdTe photoconductive devices.

Citation Download Citation

Yidan Tang, Jia Jia, Hui Qiao, Yan Zhang, and Xiangyang Li "Application of Au/Sn in the formation of p-HgCdTe photoconductive detectors' electrodes", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84190Z (15 October 2012); https://doi.org/10.1117/12.974977

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