Photo-voltage in InGaAs/GaAs heterostructures with one-dimensional nanostructures

Marianna S. Kovalova; Serhiy V. Kondratenko; Colin S. Furrow; Vasyl P. Kunets; Morgan E. Ware; Gregory J. Salamo

doi:10.1117/12.2051881

2 May 2014 Photo-voltage in InGaAs/GaAs heterostructures with one-dimensional nanostructures

Marianna S. Kovalova, Serhiy V. Kondratenko, Colin S. Furrow, Vasyl P. Kunets, Morgan E. Ware, Gregory J. Salamo

Proceedings Volume 9126, Nanophotonics V; 91262H (2014) https://doi.org/10.1117/12.2051881
Event: SPIE Photonics Europe, 2014, Brussels, Belgium

Abstract

Materials with one-dimensional quantum structures are promising for their application in solar cells. The photo-voltage generation of these structures is caused by spatial separation of electron-hole pairs by a built-in electric field in the GaAs p-i-n junction. The InGaAs/GaAs sample shows a significantly higher photo-voltage in the spectral range of 1.25-1.37 eV, as compared to a reference GaAs p-n junction, due to interband transitions in the quantum wires (QWRs).

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Marianna S. Kovalova, Serhiy V. Kondratenko, Colin S. Furrow, Vasyl P. Kunets, Morgan E. Ware, and Gregory J. Salamo "Photo-voltage in InGaAs/GaAs heterostructures with one-dimensional nanostructures", Proc. SPIE 9126, Nanophotonics V, 91262H (2 May 2014); https://doi.org/10.1117/12.2051881

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