Nonvolatile organic transistor memory devices based on nanostructured polymeric materials

Mau-Shen Lu; Chien Lu; Meng-Hsien Li; Cheng-Liang Liu; Wen-Chang Chen

doi:10.1117/12.2059165

7 October 2014 Nonvolatile organic transistor memory devices based on nanostructured polymeric materials

Mau-Shen Lu, Chien Lu, Meng-Hsien Li, Cheng-Liang Liu, Wen-Chang Chen

Proceedings Volume 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII; 91850N (2014) https://doi.org/10.1117/12.2059165
Event: SPIE Organic Photonics + Electronics, 2014, San Diego, California, United States

Abstract

We report the characteristics of ferroelectric field effect transistor (FeFET) nonvolatile flash memory devices using aligned P(VDF-TrFE) electrospun nanofibers as the dielectric layer. These FeFET devices showed reliable memory behaviors and memory window proportional to the quantity of aligned nanofibers containing the ferroelectric β-phase crystalline domain. Moreover, the FeFET devices using nanofibers exhibited the long-term stability in the data retention larger than 10₄ s with the ON/OFF ratio of ~10³, and the multiple switching operation stability up to 100 cycles.

Citation Download Citation

Mau-Shen Lu, Chien Lu, Meng-Hsien Li, Cheng-Liang Liu, and Wen-Chang Chen "Nonvolatile organic transistor memory devices based on nanostructured polymeric materials", Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 91850N (7 October 2014); https://doi.org/10.1117/12.2059165

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