CMOS compatible avalanche photodetector and its application in communications

Miangang Tang; Zhigang Wu; Guohui Li

doi:10.1117/12.2071179

21 November 2014 CMOS compatible avalanche photodetector and its application in communications

Miangang Tang, Zhigang Wu, Guohui Li

Proceedings Volume 9296, International Symposium on Optoelectronic Technology and Application 2014: Advanced Display Technology; Nonimaging Optics: Efficient Design for Illumination and Solar Concentration; 929605 (2014) https://doi.org/10.1117/12.2071179
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China

Abstract

CMOS compatible avalanche photodiodes (CMOS APDs) can be fabricated with standard CMOS technology, which make CMOS APDs are considered as a key optoelectronic device for optical communication systems and optical wireless communication systems. The guard-ring (GR) structure in CMOS APDs can alleviate the premature edge breakdown (PEB) effects and greatly improve the device performance. In this paper, the influence of various type GR structure on CMOS APDs performance are discussed, and its important applications in radio-over-fibre (RoF) are reviewed.

Citation Download Citation

Miangang Tang, Zhigang Wu, and Guohui Li "CMOS compatible avalanche photodetector and its application in communications", Proc. SPIE 9296, International Symposium on Optoelectronic Technology and Application 2014: Advanced Display Technology; Nonimaging Optics: Efficient Design for Illumination and Solar Concentration, 929605 (21 November 2014); https://doi.org/10.1117/12.2071179

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