Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers

Morteza Monavarian; Shopan Hafiz; Saikat Das; Natalia Izyumskaya; Ümit Özgür; Hadis Morkoç; Vitaliy Avrutin

doi:10.1117/12.2213777

26 February 2016 Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers

Morteza Monavarian, Shopan Hafiz, Saikat Das, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç, Vitaliy Avrutin

Proceedings Volume 9748, Gallium Nitride Materials and Devices XI; 974825 (2016) https://doi.org/10.1117/12.2213777
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

The effect of compressive strain in buffer layer on strain relaxation and indium incorporation in InGaN multi-quantum wells (MQWs) is studied for two sets of samples grown side by side on both relaxed GaN layers and strained 10-pairs of AlN/GaN periodic multilayers. The 14-nm AlN layers were utilized in both multilayers, while GaN thickness was 4.5 and 2.5 nm in the first and the second set, respectively. The obtained results for the InGaN active layers on relaxed GaN and AlN/GaN periodic multilayers indicate enhanced indium incorporation for more relaxed InGaN active layers providing a variety of emission colors from purple to green.

Citation Download Citation

Morteza Monavarian, Shopan Hafiz, Saikat Das, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç, and Vitaliy Avrutin "Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974825 (26 February 2016); https://doi.org/10.1117/12.2213777

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