Study of the P3HT/PCBM interface using photoemission yield spectroscopy

Raitis Grzibovskis; Aivars Vembris

doi:10.1117/12.2227823

27 April 2016 Study of the P3HT/PCBM interface using photoemission yield spectroscopy

Raitis Grzibovskis, Aivars Vembris

Proceedings Volume 9895, Organic Photonics VII; 98950Q (2016) https://doi.org/10.1117/12.2227823
Event: SPIE Photonics Europe, 2016, Brussels, Belgium

Abstract

Photogeneration efficiency and charge carrier extraction from active layer are the parameters that determine the efficiency of organic photovoltaics (OPVs). Devices made of organic materials often consist of thin (up to 100nm) layers. At this thickness different interface effects become more pronounced. The electron affinity and ionization energy shift can affect the charge carrier transport across metal-organic interface which can affect the performance of the entire device. In the case of multilayer OPVs, energy level compatibility at the organic-organic interface is as important. Photoemission yield spectroscopy was used for organic-organic interface study by ionization energy measurements. In this work we studied “sandwich” type samples of two well-known organic photovoltaic materials- poly(3- hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl C₆₁ butyric acid methyl ester (PCBM). Ionization energy changes at the P3HT/PCBM interface depending on PCBM layer thickness were studied. P3HT layer was obtained by spin-coating while PCBM was deposited on the P3HT by thermal evaporation in vacuum. No ionization energy shift of P3HT was observed. On the contrary, PCBM at the interface with P3HT created additional 0.40eV barrier for hole transport from PCBM to P3HT.

Citation Download Citation

Raitis Grzibovskis and Aivars Vembris "Study of the P3HT/PCBM interface using photoemission yield spectroscopy", Proc. SPIE 9895, Organic Photonics VII, 98950Q (27 April 2016); https://doi.org/10.1117/12.2227823

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