InGaP top cell often limits the efficiency of multi-junction solar cells. Its efficiency is expected to increase by introducing strain-balanced In1-xGaxP/In1-yGayP multiple-quantum-wells since the concentration of photoexcited carriers into the wells enhances radiative recombination. To keep carrier collection efficiency to be similar to the case of a bulk InGaP cell, effective mobilities of carriers through the cascaded quantum wells are evaluated. The critical mobilities for maintaining good carrier transport as a photovoltaic device are discussed, which provides a general design principle for the multiplequantum- well architecture.
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