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5 March 2022 An AlGaN/GaN-based ultraviolet phototransistors with record-high responsivity for 265-nm and 365-nm detection
Haochen Zhang, Huabin Yu, Danhao Wang, Haiding Sun
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Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010R (2022) https://doi.org/10.1117/12.2609728
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
In this work, we demonstrate a high-performance ultraviolet phototransistor (UVPT) based on the AlGaN/GaN high-electron-mobility transistor (HEMT) configuration. When the device is biased at off state, the peak photoresponsivity of 3.6×107 A/W under 265nm illumination and 1.0×106 A/W under 365nm illumination can be obtained. Those two responsivity values have achieved the highest among the reported UVPTs at the same detection wavelength under off-state conditions. Furthermore, we observed a distinct difference between the rise time and decay time of the device under 265 nm and 365 nm light illumination which can be attributed to the unique device operating principle of the constructed AlGaN/GaN-based UVPT structure with different absorption mechanisms in the device.
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Haochen Zhang, Huabin Yu, Danhao Wang, and Haiding Sun "An AlGaN/GaN-based ultraviolet phototransistors with record-high responsivity for 265-nm and 365-nm detection", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010R (5 March 2022); https://doi.org/10.1117/12.2609728
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KEYWORDS
Phototransistors
Ultraviolet radiation
Field effect transistors
Gallium nitride
Photodetectors
Absorption
Switching
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