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3 October 2022 Gate-tunable 2D material-based plasmonic phototransistors with ultrahigh photoresponsivity (Conference Presentation)
Yu-Jung Lu
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Proceedings Volume PC12195, Metamaterials, Metadevices, and Metasystems 2022; PC121950N (2022) https://doi.org/10.1117/12.2632945
Event: SPIE Nanoscience + Engineering, 2022, San Diego, California, United States
Abstract
Monolayer transition metal dichalcogenides (TMDs) with an atomically thin nature are promising materials for electronics and photonics, especially at highly scaled lateral dimensions. However, the characteristically low total absorption of photons in the monolayer TMD has become a challenge in the access to and realization of monolayer TMD-based high-performance optoelectronic functionalities and devices. Here, we report gate-tunable plasmonic phototransistors (photoFETs) that consist of monolayer molybdenum disulfide (MoS2) photoFETs integrated with the two-dimensional plasmonic crystals. The plasmonic photoFET has an ultrahigh photoresponsivity achieving a 7.2-fold enhancement in the photocurrent compared to pristine 2D material-based photoFETs. The achievement is based on the breakthrough of the realization and characterization of a gate-tunable atomistically-thin phototransistor device consisting of a monolayer MoS2 photoFET integrated with a two-dimensional (2D) plasmonic crystal to enhance the light absorption rate, photo-carrier generation rate, photo-gating, and hot-carrier transfer rate. Moreover, this talk will describe different design of plasmonic phototransistors that is extensible to other types of 2D materials for ultrathin high-performance optoelectronic devices at highly scaled dimensions. Finally, we will discuss prospects for next-generation ultra-compact optoelectronic devices in the trans-Moore era.
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Yu-Jung Lu "Gate-tunable 2D material-based plasmonic phototransistors with ultrahigh photoresponsivity (Conference Presentation)", Proc. SPIE PC12195, Metamaterials, Metadevices, and Metasystems 2022, PC121950N (3 October 2022); https://doi.org/10.1117/12.2632945
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KEYWORDS
Plasmonics
Phototransistors
Optoelectronic devices
Absorption
Crystals
Molybdenum
Optoelectronics
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