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In the quest for ultra-low power electronic devices beyond the CMOS platform, ferroelectric Rashba semiconductors offer intriguing possibilities. After an overview of the main findings in this context, I will show that the ferroelectric polarization of epitaxial thin films of GeTe can be reliably switched by electrical gating and used to control spin-to-charge conversion by spin Hall effect. Ferroelectricity allows for efficient switching and stable state retention, while spin currents provides an effective read-out of the memory state. Doping, allowing and dimensionality can be used to tailor the properties of these compounds towards logic-in-memory devices with monolithic integrability with silicon.
Christian C. Rinaldi
"Perspectives of non-magnetic spin-textured ferroelectric semiconductors (Conference Presentation)", Proc. SPIE PC12205, Spintronics XV, PC122051D (4 October 2022); https://doi.org/10.1117/12.2633297
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Christian C. Rinaldi, "Perspectives of non-magnetic spin-textured ferroelectric semiconductors (Conference Presentation)," Proc. SPIE PC12205, Spintronics XV, PC122051D (4 October 2022); https://doi.org/10.1117/12.2633297