It was demonstrated by Rai et al. in 2014 that artifacts can cause big problems in sensor materials and devices which have smaller than TEM lamella thickness. These artifacts are generated due to incongruency, eutectics and peritectic. In high power, high frequency and high sensitivity optical and electronic devices and systems, binary and ternary materials can be designed with superior properties. For example, halides, selenides and tellurides have wide transparency, high mobility and low absorption and wide transparency. It is extremely difficult to achieve to good quality materials due to multicomponent without knowledge of phase diagram, vapor pressure and other thermodynamic parameters. We will present excess thermodynamic functions of several binary and ternary industrially important materials such as ZnSe, GaSe, Tl3AsSe3 and Tl4HgI6 showing the stability of these materials. These parameters are indications of congruency and stability of melts near the growth temperature.
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