Electron Beam Exposure Of GeSex

K. J. Polasko; R. F. W. Pease

doi:10.1117/12.935090

7 November 1983 Electron Beam Exposure Of GeSe_x

K. J. Polasko, R. F. W. Pease

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935090
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

Electron beam writing of fine features usually requires correction of proximity effects to achieve accurate edge placement. One scheme to reduce proximity effects is to increase the accelerating voltage (> 40 keV) [1]. We have chosen to look the other way, at low energy (< 5 keV) electron beam exposure. Retarding field electron optics enables one to form fine beams of low energy electrons. The inorganic resist system Ag₂Se/GeSe_x is well suited for low energy electron beam exposure due to its thin active region and conductive top layer. We report here on the effects of reducing the landing energy of the exposing electrons both in terms of sensitivity and proximity effects. Also we report on the absence of any edge sharpening effects for electron beam exposure and the effect of exposure rate on the required dose.

Citation Download Citation

K. J. Polasko and R. F. W. Pease "Electron Beam Exposure Of GeSe_x", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935090

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