High Current Gain GaAlAs-GaAs Heterojunction Bipolar Transistors for Monolithic Photoreceivers at 0.85 µm

Haila Wang; David Ankri

doi:10.1117/12.951219

9 July 1986 High Current Gain GaAlAs-GaAs Heterojunction Bipolar Transistors for Monolithic Photoreceivers at 0.85 µm

Haila Wang, David Ankri

Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951219
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

We report on the first monolithic integrated transimpedance photoreceiver operating at 0.85 µm wavelength using GaAlAs-GaAs heterojunction phototransistor (HPT) and heterojunction bipolar transistors (HBT). The design and the fabrication process are presented, taking into account the specific characteristics of high current gain-high speed HPT and HBT. Using 26 kΩ external feedback resistor the monolithic photoreceiver has a bandwidth of 80 MHz with a transimpedance gain of 7000 V/A and a sensitivity of -30 dBm. These preliminary results are very closed to the theoretical performances predicted for this circuit capable to operate for local network optical links at 140 Mbits with a sensitivity of -40 dBm.

Citation Download Citation

Haila Wang and David Ankri "High Current Gain GaAlAs-GaAs Heterojunction Bipolar Transistors for Monolithic Photoreceivers at 0.85 µm", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951219

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