Identification Of Substitutional Acceptors In Bridgman-Grown (Cd,Mn)Te

P. Becla; D. Heiman; J. Misiewicz; P. A. Wolff; D. Kaiser

doi:10.1117/12.941005

20 April 1987 Identification Of Substitutional Acceptors In Bridgman-Grown (Cd,Mn)Te

P. Becla, D. Heiman, J. Misiewicz, P. A. Wolff, D. Kaiser

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941005
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Intentionally doped Cd1-xMnxTe crystals with composition 0.1 < x < 0.3 were grown by the vertical Bridgman technique. Systematic studies were made of: (a) interaction of native defects with foreign impurities; (b) the mechanisms for substitutional doping of the accep-tors Cu, Au, P and As; and (c) the binding energies of various defects. The measurements involve a combination of crystallographic, electrical and optical studies. The results demonstrated that P and As play the role of effective acceptors. In Cu and Au doped samples, a high compensation mechanism was observed.

Citation Download Citation

P. Becla, D. Heiman, J. Misiewicz, P. A. Wolff, and D. Kaiser "Identification Of Substitutional Acceptors In Bridgman-Grown (Cd,Mn)Te", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.941005

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