InAs/GaAs Quantum Well Lasers Grown By Atomic Layer Epitaxy

M. A. Tischler; N. G. Anderson; R. M. Kolbas; S. M. Bedair

doi:10.1117/12.941013

20 April 1987 InAs/GaAs Quantum Well Lasers Grown By Atomic Layer Epitaxy

M. A. Tischler, N. G. Anderson, R. M. Kolbas, S. M. Bedair

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941013
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

We report the first observation of stimulated emission (16 K and 77 K) in any material grown by atomic layer epitaxy (ALE). The quantum wells in this structure are six uncoupled InAs layers 6.6 Å thick separated by 509 Å thick GaAs barriers. These are the thinnest and most highly strained (7.4%) quantum wells ever reported to support stimulated emission. These results demonstrate that ALE is capable of growing laser quality material with good control of the growth process.

Citation Download Citation

M. A. Tischler, N. G. Anderson, R. M. Kolbas, and S. M. Bedair "InAs/GaAs Quantum Well Lasers Grown By Atomic Layer Epitaxy", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.941013

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