MBE Of ZnSe On GaAs Epilayers

L. A. Kolodziejski; R. L. Gunshor; M. R. Melloch; M. Vaziri; C. Choi; N. Otsuka

doi:10.1117/12.941003

20 April 1987 MBE Of ZnSe On GaAs Epilayers

L. A. Kolodziejski, R. L. Gunshor, M. R. Melloch, M. Vaziri, C. Choi, N. Otsuka

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941003
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

The heteroepitaxial growth of ZnSe on GaAs epilayers grown by molecular beam epitaxy is found to occur via a two-dimensional growth mechanism. Alternatively, nucleation on a GaAs substrate exhibits three dimensional growth characteristics. The differentiation of the type of nucleation is evidenced by reflection high energy electron diffraction intensity oscillations, as well as the dynamic behavior of the diffraction patterns. Photoluminescence measurements of pseudomorphic ZnSe epilayers grown on GaAs epilayers provides a direct measurement of ZnSe deformation potentials.

Citation Download Citation

L. A. Kolodziejski, R. L. Gunshor, M. R. Melloch, M. Vaziri, C. Choi, and N. Otsuka "MBE Of ZnSe On GaAs Epilayers", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.941003

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