Mechanism Of Crystal Growth Of GaAs In Chemical Vapor Deposition (CVD)

Jun-ichi Nishizawa; Hidenori Shimawaki; Toru Kurabayashi; Masakazu Kimura

doi:10.1117/12.941014

20 April 1987 Mechanism Of Crystal Growth Of GaAs In Chemical Vapor Deposition (CVD)

Jun-ichi Nishizawa, Hidenori Shimawaki, Toru Kurabayashi, Masakazu Kimura

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941014
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Molecular layer epitaxy was demonstrated using TMG-AsH3 and TEG-AsH3 systems. Monomolecular layer growth per operational cycle of alternate gas injections was realized on (100) faces independent of injected TMG and AsH3 pressures in a certain range. This result implies stable chemisorption (bond-to-bond type adsorption) of reactive species by monolayer on the substrate surface. Mass spectrometric analyses suggested that this adsorbate is partially decomposed TMG, such as Ga (CH3)x, where x is a numerical function of temperature . Surface migration process was investigated in a conventional Ga-AsC13-H2 system using a triangle table method. On (111)B facets, anisotropic two-dimensional growth based on the surface migration of adsorbed species was found to be a dominant process. The direction with the largest rate of lateral growth was <12T>, while that with the smallest one was <112>.

Citation Download Citation

Jun-ichi Nishizawa, Hidenori Shimawaki, Toru Kurabayashi, and Masakazu Kimura "Mechanism Of Crystal Growth Of GaAs In Chemical Vapor Deposition (CVD)", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.941014

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