Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs Substrates

H. Cheng; J. M. DePuydt; J. E. Potts; S. K. Mohapatra; T. L. Smith

doi:10.1117/12.941002

20 April 1987 Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs Substrates

H. Cheng, J. M. DePuydt, J. E. Potts, S. K. Mohapatra, T. L. Smith

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941002
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

ZnSe epilayers have been grown on (100) GaAs substrates under various growth conditions in a systematic investigation of the relationships between growth parameters and film properties. Samples were grown under conditions corresponding to a 4 x 4 matrix in substrate temperature (Ts), Zn-to-Se beam pressure-ratio (BPR) space, with Ts = 250, 300, 350, and 400°C, and with BPR = 1/4:1, 1/2:1, 1:1, and 2:1. Measured film prOperties include donor and acceptor concentrations, carrier concentration and mobility, and the amplitude and width of donor-bound exciton (DBE) photoluminescence peaks. Under proper growth conditions we have been able to achieve room temperature carrier concentrations as low as 5.6 x 10 cm-3 , and peak mobilities of 7200 cm2 /V-sec. Low temperature photoluminescence spectra are dominated by the donor-bound exciton peak, at at 2.795eV; the amplitude of this peak is 2 to 3 orders of magnitude higher than the deep level emission in highly conductive films.

Citation Download Citation

H. Cheng, J. M. DePuydt, J. E. Potts, S. K. Mohapatra, and T. L. Smith "Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs Substrates", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.941002

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