Selective Epitaxy Of Quantum Well Structures By Atmospheric Pressure OMCVD

Kei May Lau; Stephen H. Jones; Jung-Kuei Hsu; Daniel C. Bertolet

doi:10.1117/12.941018

20 April 1987 Selective Epitaxy Of Quantum Well Structures By Atmospheric Pressure OMCVD

Kei May Lau, Stephen H. Jones, Jung-Kuei Hsu, Daniel C. Bertolet

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941018
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

AlGaAs/GaAs multiple quantum well structures have been deposited on native oxide patterned GaAs substrates and characterized by low temperature photoluminescence (PL). Standard photolithography was used to generate patterns on the plasma-grown native oxides. Single crystal multiple quantum wells grown on areas where oxides were removed have comparable high quality with those on the unpatterned substrate. QW's with different well widths ranging from 25-73 Å. show well-resolved distinct peaks in the PL spectra and the linewidths of the peaks are the same as those on the unpatterned wafer. Poly-QW's deposited on the oxide-covered regions also display a very strong luminescence signal. Instead of distinct peaks corresponding to each of the wells, a single wide band centered near the widest well transition energy was observed. There are potential applications of the polycrystalline material for ultrafast optical devices because of the short carrier lifetime. With the selective epitaxy technique, integration of active devices with single crystal QW's and others using polycrystalline is possible.

Citation Download Citation

Kei May Lau, Stephen H. Jones, Jung-Kuei Hsu, and Daniel C. Bertolet "Selective Epitaxy Of Quantum Well Structures By Atmospheric Pressure OMCVD", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.941018

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