Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures

Piotr Wiśniewski; Robert Mroczyński; Bogdan Majkusiak

doi:10.1117/12.2261676

22 December 2016 Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures

Piotr Wiśniewski, Robert Mroczyński, Bogdan Majkusiak

Proceedings Volume 10175, Electron Technology Conference 2016; 101750F (2016) https://doi.org/10.1117/12.2261676
Event: Electron Technology Conference ELTE 2016, 2016, Wisla, Poland

Abstract

In this work we present the investigations aimed at the optimization of the technology of Reactive Ion Etching in sulfur hexafluoride (SF₆) plasma of silicon, which is necessary during fabrication of TFET according to the original concept of the device designed at Institute of Microelectronics and Optoelectronics (IMiO) of Warsaw University of Technology (WUT) laboratory. We have performed a two-stage optimization of RIE process’ parameters in order to obtain a controllable process characterized by good selectivity and anisotropy. Presented in this study findings have shown that the SF₆ flow most significantly influence onto the RIE process’ results. Selected and optimized processing step will be used in the course of the fabrication of TFET devices, in future.

Citation Download Citation

Piotr Wiśniewski, Robert Mroczyński, and Bogdan Majkusiak "Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures", Proc. SPIE 10175, Electron Technology Conference 2016, 101750F (22 December 2016); https://doi.org/10.1117/12.2261676

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