Paper
3 May 2017 An advanced presence detection system using the CMOS Infrared (CIR) technology
Author Affiliations +
Abstract
This paper presents the development of advanced presence detection system using the CMOS infrared (CIR) technology. The recent advancements on microbolometer type uncooled LWIR imaging sensor technology allowed to reduce the fabrication cost of the microbolometer type detectors and the overall wafer cost and therefore to increase the use of this technology in a number of emerging applications, including various consumer applications and advance presence detection systems for smart buildings and smart offices. Such applications require even lower cost detectors, which can be achieved with a recently introduced CMOS infrared (CIR) technology that enables the mass fabrication of microbolometer type sensors in almost any CMOS foundries without additional equipment investment. This paper introduces an advanced presence detection system which uses an LWIR microbolometer type sensor fabricated using the CIR technology. The advanced presence detection (APD) system can provide 80x80 infrared video together with the temperature map of the scene where the sensor can collect LWIR radiation using 120 degrees wide FOV lens. The embedded microprocessor can process the infrared video and provide real time number of people data as output. The APD system can both provide SPI interface for OEM developers and USB interface for fast evaluation and prototyping.
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Tugay Arslan, Gorkem Cilbir, Murat Tepegoz, and Tayfun Akin "An advanced presence detection system using the CMOS Infrared (CIR) technology", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771Y (3 May 2017); https://doi.org/10.1117/12.2275165
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KEYWORDS
Sensors

Thermography

Infrared sensors

Infrared radiation

Infrared technology

CMOS sensors

Infrared detectors

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