Resonator-QWIPs for 10.6 micron detection

K. K. Choi; R. E. Bornfreund; J. G. Sun; E. A. DeCuir

doi:10.1117/12.2262514

3 May 2017 Resonator-QWIPs for 10.6 micron detection

K. K. Choi, R. E. Bornfreund, J. G. Sun, E. A. DeCuir

Proceedings Volume 10177, Infrared Technology and Applications XLIII; 101772A (2017) https://doi.org/10.1117/12.2262514
Event: SPIE Defense + Security, 2017, Anaheim, CA, United States

Abstract

We designed R-QWIP devices for narrowband 10.6 μm detection. Despite the low doping of 0.2 and 0.3 × 10¹⁸ cm^-3 and thin absorbing layer thickness of 1 μm, the observed QE is 29% and 26%, respectively. This level of QEs, combined with the large photoconductive gain in a thin layer, produces large conversion efficiencies of 20% and 15% for large photocurrents. The high photocurrent and low dark current brought by low doping thus allow the QWIPs to be BLIP at 65 K with an 11 μm cutoff. The projected NETD is 20 mK at 60 K, demonstrating the high performance of R-QWIPs.

Citation Download Citation

K. K. Choi, R. E. Bornfreund, J. G. Sun, and E. A. DeCuir "Resonator-QWIPs for 10.6 micron detection", Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101772A (3 May 2017); https://doi.org/10.1117/12.2262514

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