Effect Of Process Gas Mixture On Reactively DC Magnetron Sputtered (Al1_xSix)OyNz Thin Films

Erik Bjornard

doi:10.1117/12.950013

27 February 1989 Effect Of Process Gas Mixture On Reactively DC Magnetron Sputtered (Al_{1_x}Si_x)O_yN_z Thin Films

Erik Bjornard

Proceedings Volume 1019, Thin Film Technologies III; (1989) https://doi.org/10.1117/12.950013
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

(A1 1-x Si x )0yNz films have properties which make them desirable as durable overcoats and corrosion barriers in optical thin film structures. (Al, Si )O N films were reactively DC sputtered from Al, Si targets (x = 0.0, 0.117, 0.30) in Ar/N2/O2 atmospheres. Nitride films had sputter efficiencies three times that of the oxides and ESCA analysis of the films showed that the film composition varied non-linearly with reactive gas ratio and sputter rate, incorporating more oxygen than nitrogen for a given gas flow. This behavior is correlated with the hysteresis curves for the oxide and nitride states. Optical properties of the films were also found to vary with index dropping disproportionately to the 0/(0+N) flow ratio, but linearly with the ratio of atomic percent of 0 and N in the films. Durability properties of (A1 1_x Si x)0 NZ films were tested at several compositions. It was found that with high nitrogen context the wear resistance increased with Si content and the oxides were generally less wear resistant than the nitrides. The corrosion resistance also increased with Si content, but in this case, the oxides were generally more stable. Film stress became more compressive with 0 and Si content. Analysis of ESCA binding energy data indicates that the Si forms alumino-silicate bonds in the film, which apparently contributes to the durability properties.

Citation Download Citation

Erik Bjornard "Effect Of Process Gas Mixture On Reactively DC Magnetron Sputtered (Al_{1_x}Si_x)O_yN_z Thin Films", Proc. SPIE 1019, Thin Film Technologies III, (27 February 1989); https://doi.org/10.1117/12.950013

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