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The photoelectrochemical properties of semiconducting bismuth sulphide (Bi2S3) films (in contact with an aqueous electrolyte) grown on bismuth have been investigated. Using an Optically Beam Induced Contrast (OBIC) technique, it has been possible to image these films, and to identify local variations corresponding to grain boundaries and other recombination centres. It is seen that the form of these regions varies with the thickness of the film. Both object scanning and beam scanning have been investigated for generating images and these two methods are compared. Samples have also been investigated by Intensity Modulated Photocurrent Spectroscopy (IMPS). This method involves sinusoidal intensity modulation of the incident laser radiation at different frequencies, and the analysis of the resulting photocurrent response. Our extension of this method has been to map the IMPS response over the specimen surface in order to obtain specific information on local properties.
Anthony R. Kucernaki,Robert Peat, andDavid E. Williams
"Scanning Laser Photocurrent Spectroscopy Of Electrochemically Grown Bismuth Sulphide Films", Proc. SPIE 1028, Scanning Imaging, (9 February 1989); https://doi.org/10.1117/12.950346
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Anthony R. Kucernaki, Robert Peat, David E. Williams, "Scanning Laser Photocurrent Spectroscopy Of Electrochemically Grown Bismuth Sulphide Films," Proc. SPIE 1028, Scanning Imaging, (9 February 1989); https://doi.org/10.1117/12.950346