Assessing Semiconductor Interfaces By Low Energy Catholuminescence Spectroscopy

R.Enrique Viturro; Leonard J. Brilison

doi:10.1117/12.951011

15 March 1989 Assessing Semiconductor Interfaces By Low Energy Catholuminescence Spectroscopy

R.Enrique Viturro, Leonard J. Brilison

Proceedings Volume 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors; (1989) https://doi.org/10.1117/12.951011
Event: SPIE Advanced Processing Technologies for Optical and Electronic Devices (colocated wth OPTCON), 1988, Santa Clara, CA, United States

Abstract

Low energy cathodoluminescence spectroscopy (CLS) is a powerful new technique for characterizing the electronic structure of semiconductor surfaces and interfaces. CLS provides information on localized states, deep level surface and interface defects, and compound formation at semiconductor interfaces. This electron microscopy technique provides direct identification of reaction-induced metal/semiconductor interface states, which evolve in energy and density with multilayer metal coverages of the particular metal, and extrinsic surface states due to lattice disruption. All of these interface states can play a role in Schottky barrier formation. Unlike surface science techniques sensitive to only the outer few monolayers, low energy CLS reveals electronic structure of "buried" interfaces.

Citation Download Citation

R.Enrique Viturro and Leonard J. Brilison "Assessing Semiconductor Interfaces By Low Energy Catholuminescence Spectroscopy", Proc. SPIE 1037, Monitoring and Control of Plasma-Enhanced Processing of Semiconductors, (15 March 1989); https://doi.org/10.1117/12.951011

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