Nanoscopic insights into the structural and optical properties of  a thick InGaN shell grown coaxially on GaN microrod  
 (Conference Presentation)

Frank Bertram; Marcus Mueller; Gordon Schmidt; Sebastian Metzner; Peter Veit; Juergen H. Christen; Jana Hartmann; Hao Zhou; H.H. Wehmann; Andreas Waag

doi:10.1117/12.2288262

14 March 2018 Nanoscopic insights into the structural and optical properties of a thick InGaN shell grown coaxially on GaN microrod (Conference Presentation)

Frank Bertram, Marcus Mueller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Juergen H. Christen, Jana Hartmann, Hao Zhou, H.H. Wehmann, Andreas Waag

Author Affiliations +

Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 105321E (2018) https://doi.org/10.1117/12.2288262
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

We present a nanometer-scale correlation of the structural, optical, and chemical properties of InGaN/GaN core-shell microrods. The core-shell microrods have been fabricated by metal organic vapor phase epitaxy (MOVPE) on c-plane GaN/sapphire templates covered with a SiO2-mask. The MOVPE process results in a homogeneous selective area growth of n-doped GaN microrods out of the mask openings. Surrounding the n-GaN core, a nominal 5 nm thick GaN shell and 30 nm thick InGaN layer were deposited. Highly spatially resolved cathodoluminescence (CL) directly performed in a scanning transmission electron microscope (STEM) was applied to analyze the selective Indium incorporation in the thick InGaN shell and the luminescence properties of the individual layers. Cross-sectional STEM analysis reveal a hexagonal geometry of the GaN-core with m-plane side-walls. Directly at the corners of the hexagon a-plane nano-facets with a length of 45 nm are formed. The overgrowth of the GaN core with InGaN leads to a selective formation of Indium-rich domains with triangular cross-section exactly at these nano-facets as evidenced by Z-contrast imaging. Probing the local luminescence properties, the most intense CL emission appears at the m-plane side-facets with 392 nm peak wavelength. As expected, the Indium-rich triangles emit a red-shifted luminescence around 500 nm.

Conference Presentation

Citation Download Citation

Frank Bertram, Marcus Mueller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Juergen H. Christen, Jana Hartmann, Hao Zhou, H.H. Wehmann, and Andreas Waag "Nanoscopic insights into the structural and optical properties of a thick InGaN shell grown coaxially on GaN microrod (Conference Presentation)", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321E (14 March 2018); https://doi.org/10.1117/12.2288262

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Gallium nitride

Indium gallium nitride

Luminescence

Electron microscopes

Scanning transmission electron microscopy

Metals

Nanorods

Show All Keywords

Keywords/Phrases

Search In:

Publication Years