Engineering III-V nanowires for optoelectronics: from epitaxy to terahertz photonics

Hannah J. Joyce; Chawit Uswachoke; Sarwat A. Baig; Stephanie O. Adeyemo; Jessica L. Boland; Djamshid A. Damry; Christopher L. Davies; Jennifer Wong-Leung; H. Hoe Tan; C. Jagadish; Laura M. Herz; Michael B. Johnston

doi:10.1117/12.2299831

21 February 2018 Engineering III-V nanowires for optoelectronics: from epitaxy to terahertz photonics

Hannah J. Joyce, Chawit Uswachoke, Sarwat A. Baig, Stephanie O. Adeyemo, Jessica L. Boland, Djamshid A. Damry, Christopher L. Davies, Jennifer Wong-Leung, H. Hoe Tan, C. Jagadish, Laura M. Herz, Michael B. Johnston

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Proceedings Volume 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV; 105430I (2018) https://doi.org/10.1117/12.2299831
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Nanowires show unique promise as nanoscale building blocks for a multitude of optoelectronic devices, ranging from solar cells to terahertz photonic devices. We will discuss the epitaxial growth of these nanowires in novel geometries and crystallographic phases, and the use of terahertz conductivity spectroscopy to guide the development of nanowire-based devices. As an example, we will focus on the development of nanowire-based polarization modulators for terahertz communications systems.

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Hannah J. Joyce, Chawit Uswachoke, Sarwat A. Baig, Stephanie O. Adeyemo, Jessica L. Boland, Djamshid A. Damry, Christopher L. Davies, Jennifer Wong-Leung, H. Hoe Tan, C. Jagadish, Laura M. Herz, and Michael B. Johnston "Engineering III-V nanowires for optoelectronics: from epitaxy to terahertz photonics", Proc. SPIE 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 105430I (21 February 2018); https://doi.org/10.1117/12.2299831

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