Shot-noise limited throughput of soft x-ray ptychography for nanometrology applications

Wouter Koek; Bastiaan Florijn; Stefan Bäumer; Rik Kruidhof; Hamed Sadeghian

doi:10.1117/12.2306488

13 March 2018 Shot-noise limited throughput of soft x-ray ptychography for nanometrology applications

Wouter Koek, Bastiaan Florijn, Stefan Bäumer, Rik Kruidhof, Hamed Sadeghian

Proceedings Volume 10585, Metrology, Inspection, and Process Control for Microlithography XXXII; 1058533 (2018) https://doi.org/10.1117/12.2306488
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

Due to its potential for high resolution and three-dimensional imaging, soft x-ray ptychography has received interest for nanometrology applications. We have analyzed the measurement time per unit area when using soft x-ray ptychography for various nanometrology applications including mask inspection and wafer inspection, and are thus able to predict (order of magnitude) throughput figures. Here we show that for a typical measurement system, using a typical sampling strategy, and when aiming for 10-15 nm resolution, it is expected that a wafer-based topology (2.5D) measurement takes approximately 4 minutes per μm² , and a full three-dimensional measurement takes roughly 6 hours per μm² . Due to their much higher reflectivity EUV masks can be measured considerably faster; a measurement speed of 0.1 seconds per μm² is expected. However, such speeds do not allow for full wafer or mask inspection at industrially relevant throughput.

Citation Download Citation

Wouter Koek, Bastiaan Florijn, Stefan Bäumer, Rik Kruidhof, and Hamed Sadeghian "Shot-noise limited throughput of soft x-ray ptychography for nanometrology applications", Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058533 (13 March 2018); https://doi.org/10.1117/12.2306488

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KEYWORDS

Photons

Diffraction

Sensors

3D metrology

Photomasks

Reflectivity

Semiconducting wafers

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