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14 May 2018 Improvement in NEDT characteristics of InAs/GaAs quantum dot based 320x256 focal plane array implanted with hydrogen ions
S. Upadhyay, D. P. Panda, D. Das, N.B.V. Subrahmanyam, P. Bhagwat, S. Chakrabarti
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Proceedings Volume 10624, Infrared Technology and Applications XLIV; 1062423 (2018) https://doi.org/10.1117/12.2305069
Event: SPIE Defense + Security, 2018, Orlando, FL, United States
Abstract
In this work, we demonstrate two times enhancement in NEDT response of InAs/InGaAs/ GaAs dot-in-the-well (DWELL) structure implanted with hydrogen ions of 3 MeV energy and 5×1012 ions/cm2 fluence. Low temperature photoluminescence study shows emission peak at 1130 nm which corresponds to ground state transition between conduction to valence band. PL enhancement is observed in all hydrogen implanted samples indicating the passivation of defects/dislocations in the vicinity of QDs and surrounding layer. The spectral response peak was observed at 5 μm corresponding to the intersubband transition and measured upto 76 K. Next, 320×256 format infrared FPA was fabricated involving multistage lithography, wet etching, metal stack and bump deposition. The NEDT parameter, which represents minimum temperature difference that FPA based camera can resolve, improved from 239 mK( as-grown) to 129 mK ( implanted sample).
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S. Upadhyay, D. P. Panda, D. Das, N.B.V. Subrahmanyam, P. Bhagwat, and S. Chakrabarti "Improvement in NEDT characteristics of InAs/GaAs quantum dot based 320x256 focal plane array implanted with hydrogen ions", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 1062423 (14 May 2018); https://doi.org/10.1117/12.2305069
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KEYWORDS
Ions
Heterojunctions
Hydrogen
Quantum dots
Gallium arsenide
Photodetectors
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