Improvement of light extraction in AlGaN-based deep ultraviolet light-emitting diodes (Conference Presentation)

Shiou Yi Kuo; Tien-Chang Lu

doi:10.1117/12.2509064

5 March 2019 Improvement of light extraction in AlGaN-based deep ultraviolet light-emitting diodes (Conference Presentation)

Shiou Yi Kuo, Tien-Chang Lu

Author Affiliations +

Proceedings Volume 10918, Gallium Nitride Materials and Devices XIV; 109181Z (2019) https://doi.org/10.1117/12.2509064
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

One of the main reasons that the emission efficiency of GaN-based light emitting diodes (LEDs) decreases significantly as the emission wavelength shorter than 300 nm is the low light-extraction efficiency (LEE). Especially in deep ultra-violet (DUV) LEDs, light propagating outside the escape cone and being reflected back to the semiconductor or substrate layer is absorbed not only by active layers but also by p-type layers with narrower bandgaps and electrodes that is neither transparent nor reflective for the DUV wavelength. In this report, we propose a DUV LED structure with thin indium-tin-oxide (ITO) layer as the p-ohmic contact and DBR as the reflectivity mirror. The DUV LED with the ITO/DBR p-ohmic-contact layer showed the output power of 30% higher than that from the DUV LED with Ni/Au p-ohmic-contact layer.

Conference Presentation

Citation Download Citation

Shiou Yi Kuo and Tien-Chang Lu "Improvement of light extraction in AlGaN-based deep ultraviolet light-emitting diodes (Conference Presentation)", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181Z (5 March 2019); https://doi.org/10.1117/12.2509064

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