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4 March 2019 Synthesis of lateral heterostructures of transition-metal dichalcogenides via spatially-controlled alloying (Conference Presentation)
Hossein Taghinejad
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Proceedings Volume 10927, Photonic and Phononic Properties of Engineered Nanostructures IX; 1092707 (2019) https://doi.org/10.1117/12.2516160
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
Alloying of transition-metal dichalcogenides (TMDs) has mostly been explored for rudimentary applications such as bandgap tuning and defect healing. To achieve more complex functionalities, we developed a modified approach based on specially-controlled alloying of atomically-thin TMDs [1, 2]. In this talk, we will discuss application of this modified technique for the synthesis of TMD lateral heterostructures with arbitrary shapes, arbitrary dimensions, and arbitrary band alignments. In addition, via accurate optical and electrical characterizations, we will discuss the prospect of these lateral heterostructures for applications in opto-electronic devices at nanoscale. [1] H. Taghinejad et. al., “Strain relaxation via formation of cracks in compositionally-modulated two-dimensional semiconductor alloys,” Nature 2D Materials and Applications 3, 10 (2018). [2] H. Taghinejad et. al., “Defect-Mediated Alloying of Monolayer Transition-Metal Dichalcogenides,” Submitted (2018).
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Hossein Taghinejad "Synthesis of lateral heterostructures of transition-metal dichalcogenides via spatially-controlled alloying (Conference Presentation)", Proc. SPIE 10927, Photonic and Phononic Properties of Engineered Nanostructures IX, 1092707 (4 March 2019); https://doi.org/10.1117/12.2516160
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KEYWORDS
Heterojunctions
Optical alignment
Optoelectronics
Semiconductors
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