CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10929 > Article
Presentation
4 March 2019 Type-II GaSb/InAlAs quantum dots grown on InP (001) substrate by droplet epitaxy (Conference Presentation)
Baolai Liang, Diana Huffaker, Yuriy Mazur, Morgan Ware, Gregory Salamo, Qing Yuan, Ying Wang, Xiaoli Li, Shufang Wang, Guangsheng Fu
Author Affiliations +
Proceedings Volume 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI; 109290H (2019) https://doi.org/10.1117/12.2509207
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
The GaSb quantum dots (QDs) with type II band alignment have attracted great attention recently. They are predicted to be optimizing active region materials for achieving high efficient intermediate-band solar cells and for obtaining ultra-long storage time for memory cells. In this research, GaSb QDs sandwiched inside InAlAs matrix lattice-matched to InP (001) substrate have been obtained via droplet epitaxy. The droplet epitaxy enable us to achieve low density (~2.6 x 10^9/cm^2) and large size (average height ~6.5nm) for the QDs while the lattice mismatch between the GaSb and InAlAs matrix is only ~4%. PL measurements reveal a type-II band alignment for these GaSb/InAlAs/InP QDs. The PL peak energy of QDs shows a blue-shift of >100 meV when the laser intensity increases by six orders of magnitude. Time-resolved PL measurements further confirm the type-II band alignment for the QDs by showing a maximum carrier lifetime of ~4.5 ns. The abnormal dependence of peak energy of QD PL band on the temperature in together with the special PL decay curve indicate that these GaSb/InAlAs QDs likely have different physics mechanism from common GaSb/GaAs type-II QDs. This study provide useful information for understanding the band structure and carrier dynamics of the GaSb/InAlAs QDs grown on InP surface.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Baolai Liang, Diana Huffaker, Yuriy Mazur, Morgan Ware, Gregory Salamo, Qing Yuan, Ying Wang, Xiaoli Li, Shufang Wang, and Guangsheng Fu "Type-II GaSb/InAlAs quantum dots grown on InP (001) substrate by droplet epitaxy (Conference Presentation)", Proc. SPIE 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, 109290H (4 March 2019); https://doi.org/10.1117/12.2509207
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Epitaxy
Quantum dots
Gallium antimonide
Carrier dynamics
Physics
Solar cells
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top