Impact of ultra-thin quaternary capping on modulation doped p-i-p quantum dots (InAs/GaAs) based infrared detector

Vidya P. Deviprasad; Hemant Ghadi; Debabrata Das; Debiprasad Panda; Subhananda Chakrabarti

doi:10.1117/12.2508615

4 March 2019 Impact of ultra-thin quaternary capping on modulation doped p-i-p quantum dots (InAs/GaAs) based infrared detector

Vidya P. Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Author Affiliations +

Proceedings Volume 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI; 1092911 (2019) https://doi.org/10.1117/12.2508615
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

In this study, we demonstrate the device performance of modulation doped InAs/GaAs p-i-p QDIP (device A) and the effect of thin 1 nm quaternary (InAlGaAs) capping on the same heterostructure (device B). The ground state emission peak at 9 K from photoluminescence spectroscopy was measured at 1055.1 nm and 1046.4 nm for sample A and B, respectively. The measured dark current densities at 75 K for an applied bias of -1 V were 1.079 A/cm⁻² and 0.038 A/cm⁻² for device A and B, respectively. The fabricated single pixel detectors from device A exhibited emission peak in short wave infrared regime whereas whereas device B exhibited a multicolour spectral response from short wave (SWIR) to mid wave infrared (MWIR) region. The measured spectral peaks at low temperature were at 2 and 2.39 μm for device A and at 2.013, 2.49, 3.49 and 4.36 μm with a dominant peak in SWIR region for device B. Both the devices exhibited spectral response peak up to 75K with a responsivity of 0.832 A/W for device A compared to that of 0.545 A/W for device B at -2.5V bias. Tunability in detection peak with improvement in device performance was achieved by incorporating additional quaternary capping.

Citation Download Citation

Vidya P. Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, and Subhananda Chakrabarti "Impact of ultra-thin quaternary capping on modulation doped p-i-p quantum dots (InAs/GaAs) based infrared detector", Proc. SPIE 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, 1092911 (4 March 2019); https://doi.org/10.1117/12.2508615

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