Memristor technology will strongly influence the architecture of computer systems in the near future. The initial motivation for the development of memristive technologies was the search for novel materials for next-generation memories. The potential application of memristors in novel domains, e.g. in-memory information processing, reconfigurable logics [1], neuromorphic computing [2], and hardware cryptography [3], makes it more than ever necessary to understand the underlying mechanisms underlying the nonvolatile reconfiguration of electrical properties of memristors and to integrate memristor technology into beyond Si oxide electronics. We have developed reconfigurable perovskite memristors, namely the bipolar BiFeO3 and the unipolar YMnO3, and report on their properties and potential applications.
[1] T. You et al., Adv. Funct. Mat. 24, 3357-3365, 2014.
[2] N. Du et al., Front. Neurosci. 9, 227, 2015.
[3] N. Du et al., J. Appl. Phys. 115, 124501, 2014.
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