Hybrid vertically integrated thyristor-semiconductor laser assemblies for generating ns laser pulses

Sergey O. Slipchenko; Aleksandr A. Podoskin; Dmitry Romanovich; Nikita A. Pikhtin; Timur Bagaev; Maxim Ladugin; Aleksandr Marmalyuk; Vladimir Simakov; Piotr Kop'ev

doi:10.1117/12.2545098

26 February 2020 Hybrid vertically integrated thyristor-semiconductor laser assemblies for generating ns laser pulses

Sergey O. Slipchenko, Aleksandr A. Podoskin, Dmitry Romanovich, Nikita A. Pikhtin, Timur Bagaev, Maxim Ladugin, Aleksandr Marmalyuk, Vladimir Simakov, Piotr Kop'ev

Author Affiliations +

Proceedings Volume 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII; 1128425 (2020) https://doi.org/10.1117/12.2545098
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Vertical stacks based on high-power semiconductor lasers and low-voltage high-current AlGaAs/GaAs and InGaAs/AlGaAs/GaAs thyristors have been developed and studied for generating current pulse in low-impedance load circuits based on semiconductor lasers. Pump current pulses with an amplitude up to 200 A for AlGaAs/GaAs thyristors and up to 70 A for InGaAs/AlGaAs/GaAs thyristors were realized in broad area diode lasers and 3-stripe diode laser mini bars, with optical pulse duration of 40-600 ns and a total peak power of about 78 W. The feasibility of generating current pulses with an amplitude of 16 A and a duration of 2.5 ns is shown, which makes it possible to obtain laser pulses with a peak power of 8 W and a duration of 2 ns. It is shown that the parallel joint of single thyristors allows one to multiply the increase in the current pulse amplitude, while maintaining efficiency and duration.

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Sergey O. Slipchenko, Aleksandr A. Podoskin, Dmitry Romanovich, Nikita A. Pikhtin, Timur Bagaev, Maxim Ladugin, Aleksandr Marmalyuk, Vladimir Simakov, and Piotr Kop'ev "Hybrid vertically integrated thyristor-semiconductor laser assemblies for generating ns laser pulses", Proc. SPIE 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII, 1128425 (26 February 2020); https://doi.org/10.1117/12.2545098

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